Downstream plasma source – 2.45 GHz
This surface wave type of plasma source generates plasma in a dielectric material tube (diameter 20-60 mm) placed in a standard WR340 waveguide. This plasma source enables the ignition and sustaining of long plasma columns depending on the pressure, the microwave power and the nature of the ‘plasma’ gas
Technical specifications
- Pressure rangeA few 10-2 mbar up to atmosperic pressure
- Gas typeAr, N2, O2, air, …
- Maximum power6 kW
- Applications typeCreation of radicals / reactive species, surface activation, PECVD, gas abatement, gasification, sterilization (UV), nanopowder synthesis
Downstream source, 2.45 GHz WR340
Downstream source – 2.45 GHz WR340, Argon at 1 mbar and at different microwave power levels
Surfaguide plasma source – 2.45 GHz
Surfaguide plasma source generates plasma in a dielectric tube via a surface wave. The main feature of the Surfaguide is the reduced height of the standard waveguide to locally intensify the microwave electric field and consequently, help with the ignition and sustaining the plasma. This source is principally suited for operation in the range of a few mbar up to atmospheric pressure.
Technical specifications
- Pressure rangeA few 10-2 mbar up to atmosperic pressure
- Gas typeAr, N2, O2, air, …
- Maximum power6 kW
- Applications typeCreation of radicals / reactive species, surface activation, PECVD, gas abatement, gasification, sterilization (UV), nanopowder synthesis
Watercooled surfaguide WR340
S-Wave plasma source – 2.45 GHz
The S-wave is a plasma reactor used for microwave propagation and designed to launch a surface electromagnetic wave. The S-wave is an effective plasma source for the production of reactive / excited species using a 6 mm or 8 mm diameter dielectric tubes. When used for measurements and analysis, to avoid spurious spectral lines due to the mains 50/60 Hz we recommend using Sairem low ripple solid state microwave generator GMS 200 W.
Technical specifications
- Pressure rangeA few 10-2 mbar up to a few bars
- Gas typeArgon or argon based gas mixture at atmospheric pressure. All gases at reduced pressure.
- Maximum power300 W
- Applications typeCreation of radicals / reactive species, surface activation, elementary analysis
S-Wave for power up to 200 W represented with an argon plasma at atmospheric pressure – 2.45 GHz
Aura-Wave ECR Coaxial plasma source – 2.45 GHz
Aura-Wave ECR Coaxial plasma source
Aura-Wave has been designed to be self-adapted once the plasma ignited. A magnetic field combined to the electromagnetic wave allows the creation of plasma at low pressure – range of 10-3 mbar.
Technical specifications
- Pressure rangeA few 10-4 mbar up to 10-1 mbar
- Gas typeAr, N2, O2, CH4, He, air, …
- Maximum power200 W
- Applications typeLarge volume treatment, creation of radicals / reactive species, surface activation, PECVD, etching, surface treatment (nitruration, cleaning…), strerilization (reactive species / UV / ionic bombardment)
Oxygen, 7 × 10-3 mbar, 190 W
Argon, 2,5 × 10-3 mbar, 1 W
Combined with Sairem solid-state microwave generator, this source can maintain plasmas at power levels starting with 1 W. For small mismatches due to operating condition limitations, it is always possible to vary the frequency of the solid state generator to match the impedance.
In multi-source set up, and thanks to SAIREM solid state microwave modules, Aura-Wave is ideal for the production of large volumes of plasma [1-4] at operating pressures between 10-3 mbar and 10-1 mbar, allowing to obtain plasma density up to a few 1011 cm-3 in different gases.
N2 – Ar, 10-2 mbar,
8 Aura-Wave sources x 100 W
Hi-Wave collisional plasma source – 2.45 GHz
The Hi-Wave microwave collisional plasma source has been designed to sustain over-dense microwave plasma from 10-2 mbar to a few 10-1 mbar and from a few watt whatever the gas.
Technical specifications
- Pressure range10-2 mbar up to a few 10-1 mbar
- Gas typeAr, O2, N2, air, H2, CH4…
- Maximum power300 W
- Applications typeLarge surface treatment, creation of radicals / reactive species, PECVD, nanocrystalline diamond, etching, surface treatment, sterilization
Hi-Wave collisional plasma source
Air, 10-1 mbar, 200 W
Oxygen, 6 × 10-2 mbar, 8 Hi-Wave sources × 200 W
Nitrogen, 6 × 10-2 mbar, 8 Hi-Wave sources × 200 W
Combined with Sairem solid-state microwave generator, this source can maintain plasma at power levels starting from a few W. To correct small mismatches due to change in operating conditions, the variable frequency function of the solid state generator helps with impedance matching.
In multi-source set up – matrix or crown configurations – Hi-Wave is ideal for the treatment of large surfaces [3-5] at operating pressures between 10-2 mbar and a few 10-1 mbar and allows to obtaining over-dense plasmas, plasma density higher than 1012 cm-3.
ICP plasma source – 13.56 MHz and 27.12 MHz
The ICP (Inductive Coupled Plasma) plasma source operates at radio-frequency and can generate inductive plasmas. The RF power is applied to the metal coiled around a dielectric tube. The variations of the magnetic field which is induced by the RF current flowing into the coils, together with the electric field created by the potential difference applied between the coils, allow creating plasma inside a dielectric tube.
Technical specifications
- Pressure rangeA few 10-2 mbar up to a few 100s mbar
- Gas typeAr, N2, O2, air, …
- Maximum power2 kW
- Applications typeCreation of radicals / reactive species, surface activation, PECVD
SAIREM PLASMA SOURCES
General presentation
ICP plasma source: Argon 5.10-1 mbar, 100 W. Dielectric tube diameter = 55 mm
[1] S Béchu, A Bès, A Lacoste, J Pelletier, Device and method for producing and/or confining a plasma, Patent WO 2010/049456.
[2] L Latrasse, M Radoiu, J-M Jacomino, B Depagneux, Design of an ECR coaxial microwave plasma source “Aura-Wave” using solid state microwave generator, 14th International Conference on Microwave and High Frequency Heating, Nottingham, UK (2013).
[3] L Latrasse, M Radoiu, J-M Jacomino, A Grandemenge, Facility for microwave treatment of a load, Patent WO 2012/146870.
[4] L Latrasse, M. Radoiu, Elementary device for applying a microwave energy with coaxial applicator, Patent WO 2017/060611.
[5] L Latrasse, M Radoiu, Elementary device for producing a plasma, having a coaxial applicator, Patent WO 2017/060612.
[6] L Latrasse, M Radoiu, T Nelis, O Antonin, Self-matching plasma sources using 2.45 GHz solid-state generators: microwave design and operating performance, J Microw Power Electromagn Energy. 2017, DOI: 10.1080/08327823.2017.1388338.
[7] L Latrasse, M Radoiu, J Lo , P Guillot, 2.45-GHz microwave plasma sources using solid state microwave generators. ECR-type plasma source. J Microw Power Electromagn Energy. 2017, 50:308–321.
[8] L Latrasse, M Radoiu, J Lo, P Guillot, 2.45-GHz microwave plasma sources using solid-state microwave generators. Collisional-type plasma source. J Microw Power Electromagn Energy. 2017, 51:43–58.
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