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Microwave plasma for dry etching
Remove material and resin from surfaces with our dry etching microwave plasma process.
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Today, uniform plasma processes over large dimensions, and most often requiring strong ionic assistance, are essential for etching processes such as RIE (Reactive Ion Etching), deep etching or resist removal. These requirements have stimulated the development of uniform plasma sources, of high plasma density, and capable moreover of delivering high concentrations of reactive species.
Microwave plasma sources are well known for their performance in terms of creating high densities of reactive species, but have often been considered second best given the difficulty of implementing them in an industrial process. Such sources often require an impedance adaptation system that is difficult to automatize.
Our exclusive plasma sources
In addition, to create a large volume of plasma by overcoming the critical density limiting the propagation of waves, it is necessary to wisely distribute the plasma sources. This adds a strong constraint on the control of the power transmitted to each source.
To overcome these constraints, we have developed two innovative self-matching plasma sources working with 2.45 GHz solid state generators: Aura-Wave and Hi-Wave.
Aura-Wave ECR pasma source
Aura-Wave is an ECR (electronic cyclotron resonance) microwave coaxial plasma source which can sustain stable plasmas from a few 10-4 to 10-1 mbar (a few 10-2 Pa to a 10 Pa) Permanent cylindrical magnets are encapsulated and mounted in opposition inside the coaxial structure, allowing the generation of a magnetic field towards the plasma chamber in order to limit losses to the walls.
The source makes it possible to reach plasma densities of a few 1011 cm-3 in multisource configuration at 10 cm from the sources.
Hi-Wave collisional plasma source
Hi-Wave is a collisional type microwave plasma source and could operate from a few 10-2 to 1 mbar (a few Pa to 100 Pa). It is thus intended to operate without magnets in the collisional regime.
Plasma densities greater than 1012 cm-3 can be achieved in multisource configuration at 10 cm from the source plane.Contact us